Time: 11:05AM – 11:55AM
Location: Room 5
Speaker:
Dr. Bei Shi
University of California, Santa Barbara (UCSB)
Abstract:
We report the scalable monolithic integration of quantum dot lasers on 300 mm complementary metal-oxide-semiconductor (CMOS)-compatible silicon substrates and silicon photonics wafers respectively, enabled by direct heteroepitaxy and selective area heteroepitaxy techniques using metalorganic chemical vapor deposition (MOCVD). Commercialization endeavors towards high performance shortwave infrared photodetectors grown on 200 mm and 300 mm wafer platforms will also be discussed.
Speaker Bio:
Dr. Bei Shi is a Research Specialist at University of California, Santa Barbara (UCSB). Dr. Shi earned his Ph.D. from The Hong Kong University of Science and Technology (HKUST), and later joined UCSB as a postdoctoral scholar. His research focuses on heterogeneous integration of quantum dot lasers on silicon photonics via advanced selective area heteroepitaxy for AI hardwares and data centers, and developing cost-effective shortwave infrared avalanche photodetectors for LiDAR, sensing, and quantum applications. Dr. Shi has authored 2 book chapters, 80+ journal and conference papers, and holds six U.S. patents. He is also a Principal Investigator leading DoD- and NASA-funded projects to develop monolithic integration of quantum dot lasers on scalable silicon photonics platforms for diverse cutting-edge applications.