Time: 1:35 PM – 2:25 PM
Location: Room 5
Speaker:
Dr. Paul Pinsukanjana
VP of Technology and a co-founder of IntelliEPI
IntelliEPI
Abstract:
To support the growing needs for high-performance optoelectronic epitaxy materials, IntelliEPI has established production Molecular Beam Epitaxy (MBE) capabilities in the North Texas Area to produce advanced III-V epi wafers based on GaAs, InP, GaSb and III-N material systems. Some of the optoelectronic applications include Focal Plane Array (FPA) for IR imaging; APD for telecom/datacom & automotive LIDAR; Laser & LED for gas sensing; and components for SOA, EAM and detector for high-speed optical fiber network for AI/Data Center applications. Capabilities and advantages of epitaxy growth using production MBE manufacturing platform will be discussed.
Speaker Bio:
Paul Pinsukanjana is the VP of Technology and a co-founder of IntelliEPI, a merchant epi material supplier. Through his various positions, Dr. Pinsukanjana has developed extensive expertise in MBE growth and electronic/optoelectronic devices. He also served as the Principal Investigator under various US government programs. This includes NVESD-VISTA Program to develop Sb-based Type-II Strained Layer Superlattice (SLS) for IR FPA applications. At JPL, he served as Member of Engineering Staff working on optoelectronics and sub-millimeter wave devices. At Applied EPI (now part of Veeco), Paul served as the In-situ Technology Director to implement real-time sensor monitoring technologies for multi-wafer production MBE. Dr. Pinsukanjana received his Ph.D. in Physics from UC Santa Barbara in 1994, and BA in Physics and Mathematics from UC Berkeley in 1988.